NANOMETER CMOS

by Frank Schwierz (Technical University Ilmenau, Germany), Hei Wong (City University of Hong Kong, Hong Kong) & Juin J Liou (University of Central Florida, USA)

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.

An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

Contents:

• The Evolution of Silicon Electronics
• MOSFET Theory
• Nanoscale MOSFETs
• MOSFETs for RF Applications
• Overview of Nanometer CMOS Technology
• Outlook

Readership: Graduates and postgraduate students, researchers, engineers and managers in the fields of electrical & electronic engineering and nanoelectronics & microelectronics.

"Nanoscale CMOS has become mainstream technology. This book deals with a very important topic and is written by two well-known contributors to the field. It is a very timely and important book."

Prof Michael Shur Rensselaer Polytechnic Institute

"This book Nanometer CMOS combines the knowledge of three distinguished authors in a unique blend transcending from early history to modern day nanotechnology; the text will be both enjoyable, educational and illuminating for the technical novice to modern expert."

Dr Steven Voldman IEEE Fellow ESD Association

352pp		Jan 2010
978-981-4241-08-3		US$155